Optical characterization of InGaAs-GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators
Identifieur interne : 018179 ( Main/Repository ); précédent : 018178; suivant : 018180Optical characterization of InGaAs-GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators
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Abstract
Variable angle spectroscopic ellipsometry (VASE) technique is used to measure the optical constants of InGaAs/GaAs multiple quantum well (MQW) structures for the purpose of designing tunable optical modulators. The VASE measurements also include field-induced changes in index of refraction and absorption. These measured changes in MQWs are in agreement with theoretical computations. In addition, the design and simulated performance of an InGaAs/GaAs MQWs Fabry-Perot modulator using the VASE data is presented. © 1997 American Institute of Physics.
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